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Datasheet File OCR Text: |
to-92 plastic-encapsulate transistors BC546/bc547/bc548 transistor (npn) features z high voltage z complement to bc556,bc557,bc558 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage BC546 bc547 bc548 80 50 30 v v ceo collector-emitter voltage BC546 bc547 bc548 65 45 30 v v ebo emitter-base voltage 6 v i c collector current -continuous 100 ma p d total device dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions m in max unit collector-base breakdown voltage BC546 bc547 bc548 v cbo i c = 100 a , i e =0 80 50 30 v collector-emitter breakdown voltage BC546 bc547 bc548 v ceo i c = 1ma , i b =0 65 45 30 v emitter-base breakdown voltage v ebo i e = 10 a, i c =0 6 v collector cut-off current BC546 bc547 bc548 i cbo v cb = 70v, i e =0 v cb = 50 v, i e =0 v cb = 30v, i e =0 0.1 a collector cut-off current BC546 bc547 bc548 i ceo v ce = 60 v, i b =0 v ce = 45 v, i b =0 v ce = 30 v, i b =0 0.1 a emitter cut-off current BC546 bc547 bc548 i ebo v eb = 5v, i c =0 0.1 a dc current gain BC546 bc547 bc548 BC546a/bc547a/bc548a BC546b/bc547b/bc548b BC546c/bc547c/bc548c h fe v ce =5v, i c = 2ma 110 110 110 110 200 420 800 800 800 220 450 800 collector-emitter saturation voltage v ce(sat) i c =100ma, i b = 5ma 0.3 v base-emitter saturation voltage v be(sat) i c = 100ma, i b =5ma 1.1 v transition frequency f t v ce = 5v, i c = 10ma f = 100mhz 150 mhz to-92 1. collector 2. base 3. emitter tiger electronic co.,ltd a,may,2011
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